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MTB75N05HD
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0, I D = 250 μ Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 50 V, V GS = 0)
(V DS = 50 V, V GS = 0, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0)
(C pk ≥ 2) (Note 2)
V (BR)DSS
I DSS
I GSS
50
?
?
?
?
?
54.9
?
?
?
?
?
10
100
100
Vdc
mV/ ° C
μ Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 μ Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 10 Vdc, I D = 20 Adc)
Drain ? to ? Source On ? Voltage (V GS = 10 Vdc) (Note 3)
(I D = 75 A)
(I D = 20 Adc, T J = 125 ° C)
Forward Transconductance (V DS = 10 Vdc, I D = 20 Adc)
(C pk ≥ 1.5) (Note 2)
(C pk ≥ 3.0) (Note 2)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
15
?
6.3
7.0
0.63
?
?
4.0
?
9.5
?
0.34
?
Vdc
mV/ ° C
m Ω
Vdc
mhos
DYNAMIC CHARACTERISTICS (Not e 2)
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 V, V GS = 0,
f = 1.0 MHz)
(C pk ≥ 2.0)
(C pk ≥ 2.0)
(C pk ≥ 2.0)
C iss
C oss
C rss
?
?
?
2600
1000
230
3900
1300
300
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
?
15
30
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 25 V, I D = 75 A,
V GS = 10 V,
R G = 9.1 Ω )
t r
t d(off)
t f
?
?
?
170
70
100
340
140
200
Gate Charge
(V DS = 40 V, I D = 75 A,
V GS = 10 V)
Q T
Q 1
Q 2
Q 3
?
?
?
?
71
13
33
26
100
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 75 A, V GS = 0) (C pk ≥ 10)
(I S = 20 A, V GS = 0)
(IS = 20 A, V GS = 0, T J = 125 ° C)
(I S = 37.5 A, V GS = 0,
dI S /dt = 100 A/ μ s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.97
0.80
0.68
57
40
17
0.17
?
1.00
?
?
?
?
?
Vdc
ns
μ C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25 ″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L D
L S
?
?
?
3.5
4.5
7.5
?
?
?
nH
1.
2.
3.
4.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2%.
Reflects Typical Values. C pk = Absolute Value of (SPEC ? AVG) / 3 * SIGMA).
For accurate measurements, good Kelvin contact required.
Switching characteristics are independent of operating junction temperature.
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